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180515 500RL UN211V 00250 C7108A NTE30069 160BC M32C83T
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  2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . telephone : (201 ) 376-292 2 (212)227-600 5 fax : (201 ) 376-896 0 2n330 0 to-3 9 genera l purpos e transisto r 3 coll ?"> ' 2n330 2 to-1 8 genera l purpos e transisto r np n silico n 2 if , maximu m rating s bitin g collector-emitte r voltag a (applicabl e 0 t o 1 0 madc ) collector-bas e voltag e emitter-bu g voltag e collecto r curren t continuou s tota l devic e dissipatio n hi ta * 25 c derat e abov e 25 c tota l devic e dissipatio n (a t c - 25' c derat e abov e 25' c operatin g an d storag e junctio n temperatur e rang e symbo l vce o vcb o veb o i c p d p d tj . t,, a valu e 3 0 6 0 5. 0 50 0 2n330 0 o. a 4.5 6 3. 0 17. 2 2n330 2 0.3 6 2.0 6 1 8 10. 3 - 6 5 t o + 20 0 uni t vd c vd c vd c mad c wal t mw'" c watt s mw/" c ? c electrica l characteristic s (t a = 25 c unless otherwis e noted.) characteristi c symbo l ml n ma x of f characteristic s collector-emitte r sustainin g voltage)! ) d c - 1 0 madc . i b ' - 0 1 collector-eas e breakdown voltag e d c " 1 0 fiadc , i e ? 0 ) emitter-bas e breakdown voltag e (i e * 10/jadc , i c = 0 ) collecto r cutof f curren t (vc e - 5 0 vdc , vg e = 0 1 (vc e - s o vdc , vbe - o . t a - isoc ) emitte r cutof f curren i (vrj e * 3. 0 vdc , i c - 0 ) bas e curren t (vc e = 5 0 vdc ' v 6 e ? 0 ) vceoisus ) vibricb o v f bri e b o !ce s ieb q i b 3 0 6 0 5. 0 - _ - 0.0 1 1 0 1 0 1 0 vd c vd c vd c nad c nad c nadc o n characteristic s small-signa l characteristic s switchin g characteristic s (1 ) puls e test : puls e widt h ? 30 0 ps , dut y cycl e * 2.0% . qualit y semi-conductor s d c curren t gai n (i c * 0. 1 madc , vc e - 1 0 vdc > 2N3300 , 2n330 2 (1 c - 1. 0 madc , vc e ? 'ovde ) 2N3300 , 2n330 2 d c - 1 0 madc , vc e - 1 0 vdo(l ) 2N3300 , 2n330 2 d c - 15 0 madc , vc e - 1- 0 vdcl(l ) 2N3300 , 2n330 2 (1 c - 15 0 madc , v c - 1 0 vdchi ) 2N3300 , 2n330 2 d c - 50 0 madc , vc e - 1 0 vdcki i 2N3300 . 2n330 2 collector-emitte r saturatio n voltag e d c - 15 0 madc , i b = 1 5 madc l d c - 30 0 madc , i g ? = 3 0 madc) d c - 50 0 madc , i b " 5 0 madc l base-emitte r saturatio n voltag e d c ~ 15 0 madc , j g - 1 5 madc) (1 c - 30 0 madc , l g ? 3 0 madc ) d c - 50 0 madc , i g - 5 0 madc) bas e emitte r voltag e d c - 150ma , vc e " 10v ) hf e vceisat ) v beiiat ! vflelon ) 35 5 0 7 5 5 0 10 0 5 0 - - _ 30 0 02 2 0.4 5 0. 6 1. 1 1. 3 1. 5 1. 1 v vd c vd c ma x current-gai n bandwidt h produc t d c - 5 0 madc , vc e - 1 " v < )<: ' ' = 10 0 mhz ) outpu t capacitanc e (vc b = 1 0 vdc , i e * 0 , f - 14 0 khz ) inpu t capacitanc e (vb e - 2. 0 vdc , i c - 0 , f * 14 0 khz ) f r c ob q cib o 25 0 - 8. 0 2 0 mh l p f o f turn-o n tim e (vc c - 2 5 vdc , i c ? 30 0 madc , ib i - 3 0 madc ) turn-of f tim e (vc c " 2 5 vdc , i c ? 30 0 madc , ib i - ib j - 3 0 madc ) 'o n 'off - 6 0 15 0 n s n s downloaded from: http:///


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